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Q.153 Physics ⭐ 360° Option Elimination Active
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NEET 2020 Physics Question 153 Solution

Topic: Semiconductor Electronics: Materials, Devices and Simple Circuits · Official NTA Booklet Code E1
NEET 2020 Physics Question 153: p-n Junction Diode: Widening of Depletion Region under Reverse Bias

Question

The increase in the width of the depletion region in a p-n junction diode is due to:

  1. (1)forward bias only
  2. (2)reverse bias only
  3. (3)both forward bias and reverse bias
  4. (4)increase in forward current
✓
Verified Against NTA Final Answer Key
Option (2) : reverse bias only
📚 Semiconductor Electronics: Materials, Devices and Simple Circuits Easy
📋 Given Parameters & Problem Setup
Device p-n junction diode
Observed Change Increase in the width of the depletion region
Question Objective Identify which biasing condition causes this widening
⚡

The 30-Second Exam Hall Shortcut: ⚡ "Forward Bias NARROWS Depletion Layer; Reverse Bias WIDENS Depletion Layer!"

⏱️ 15 seconds

In reverse bias, the positive terminal of the battery is connected to the n-side and the negative terminal to the p-side. This pulls majority charge carriers (electrons in n-side, holes in p-side) AWAY from the junction, uncovering more immobile ionized donor and acceptor ions. Hence, the depletion layer width INCREASES under REVERSE BIAS ONLY! Mark Option (2) in 5 seconds.

1 In forward bias: External field opposes barrier field, pushing majority carriers toward junction -> Depletion layer width DECREASES.
2 In reverse bias: External field aids barrier field, pulling majority carriers away from junction -> Depletion layer width INCREASES.
3 Thus, increase in depletion width occurs under reverse bias only.
4 Select Option (2) reverse bias only.
🛡️
Why You Can 100% Trust This Shortcut: NCERT Physics · Semiconductor Electronics (Semiconductor Diode: p-n Junction under Reverse Bias)
📐

Step-by-Step Rigorous Workflow & Mathematical Proof

Step 1

Structure of the Depletion Region

During the formation of a p-n junction, holes diffuse from the p-side to the n-side and electrons from the n-side to the p-side. This uncovers immobile positively charged donor ions on the n-side and immobile negatively charged acceptor ions on the p-side, establishing a space-charge depletion layer devoid of free charge carriers and setting up an internal barrier electric field directed from n to p.

Step 2

Effect of Reverse Bias

In reverse bias, the p-type region is connected to the negative terminal of the external battery and the n-type region to the positive terminal. The applied reverse voltage produces an external electric field in the SAME direction as the internal barrier field. Consequently, holes in the p-side are pulled away toward the negative terminal, and electrons in the n-side are attracted toward the positive terminal.

Step 3

Consequence on Depletion Width and Barrier Height

Because majority carriers are pulled away from the junction interface, an additional layer of ionized dopant impurity atoms is exposed on both sides of the junction. Therefore, the width of the depletion region increases, and the effective barrier height increases from V0V_0 to (V0+V)(V_0 + V).

Step 4

Contrast with Forward Bias

Under forward bias, the external field opposes the barrier field, pushing majority carriers into the depletion region and dramatically reducing its width.

⭐

360° Option Elimination Engine Key Feature

Diagnose every choice: Know exactly why the right option works and why distractors fail.

4-Option Deep Scan
1 A
✗ Incorrect
Verdict & Scientific Reason:

Incorrect; forward bias DECREASES the width of the depletion layer.

⚠️
Student Fallacy (Why candidates pick this trap): Confusing forward bias with reverse bias effects.
2 B
✓ 100% Correct
Verdict & Scientific Reason:

Factually exact; majority carriers are swept away from the junction, widening the depletion region.

💡
Why this is airtight: None; fundamental semiconductor physics.
3 C
✗ Incorrect
Verdict & Scientific Reason:

Incorrect; forward bias and reverse bias produce opposite effects on depletion width.

⚠️
Student Fallacy (Why candidates pick this trap): Thinking any applied voltage widens the depletion layer.
4 D
✗ Incorrect
Verdict & Scientific Reason:

Incorrect; increase in forward current occurs when the depletion layer is narrowed and overcome, not widened.

⚠️
Student Fallacy (Why candidates pick this trap): Confusing current conduction with barrier widening.
⚠️

NTA Trap Alert: Forward vs Reverse Bias Summary

- Forward Bias: Depletion layer THINS (narrows), Barrier DECREASES, Current FLOWS. - Reverse Bias: Depletion layer WIDENS (thickens), Barrier INCREASES, Current BLOCKED.

🛡️ How to avoid the -1 mark: Widening of depletion region = REVERSE BIAS ONLY!
📖

Core NEET Syllabus Standard

Physics · Semiconductor Electronics: Materials, Devices and Simple Circuits Standard Benchmark
Core Scientific Principle Tested:

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Syllabus Focus: p-n Junction Diode: Widening of Depletion Region under Reverse Bias
✓ Core NEET UG Syllabus Anchor Syllabus & Academic Standards ↗

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